inchange semiconductor isc product specification isc silicon pnp power transistor MJE253 description collector?emitter sustaining voltage- : v ceo(sus) = -100 v(min) dc current gain - : h fe = 40(min) @ i c = -0.2 a low collector saturation voltage - : v ce( sat ) = -0.3v(max.)@ i c = -0.5 a complement to type mje243 applications designed for low power audio amplifier and low-current, high-speed switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -7 v i c collector current-continuous -4 a i cm collector current-peak -8 a i b b base current -1 a collector power dissipation t a =25 1.5 p c collector power dissipation t c =25 15 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 8.34 /w r th j-a thermal resistance,junction to ambient 83.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor MJE253 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -10ma; i b = 0 -100 v v ce (sat)-1 collector-emitter saturation voltage i c = -0.5 a ;i b = -50ma -0.3 v v ce (sat)-2 collector-emitter saturation voltage i c = -1a ;i b = -0.1a -0.6 v v be (sat) base-emitter saturation voltage i c = -2a ;i b = -0.2a -1.8 v v be (on) base-emitter on voltage i c = -0.5a ; v ce = -1v -1.5 v i cbo collector cutoff current v cb = -100v ; i e = 0 v cb = -100v ; i e = 0;t c = 125 -0.1 -0.1 a ma i ebo emitter cutoff current v eb = -7v; i c = 0 -0.1 a h fe-1 dc current gain i c = -0.2 a ; v ce = -1v 40 180 h fe-2 dc current gain i c = -1a ; v ce = -1v 15 f t current-gain?bandwidth product i c = -0.1 a; v ce = -10v; f test = 10mhz 40 mhz c ob collector capacitance i e = 0; v cb = -10v; f test = 0.1mhz 50 pf isc website www.iscsemi.cn
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